Title :
Fabrication and characterization of bipolar transistors with in-situ doped low-temperature (800 degrees C) epitaxial silicon
Author :
Ohi, S. ; Burger, Wayne R. ; Reif, Rafael
Author_Institution :
Center for Adv. Eng. Study, MIT, Cambridge, MA, USA
Abstract :
The authors report the fabrication of bipolar transistors at a maximum process temperature of 800 degrees C, utilizing in situ doped low-temperature epitaxial silicon deposited by ultralow-pressure chemical vapor deposition (U-LPCVD), and their subsequent characterization. The epitaxial silicon layers form the collector, base, and emitter layers. To attain a high donor concentration in the epitaxial emitter layer, the U-LPCVD process is plasma enhanced. Transistors having excellent DC characteristics down to collector currents of approximately 10 pA/ mu m/sup 2/ are obtained, which indicates that the bulk quality of the epitaxial films is good enough for device fabrication.<>
Keywords :
bipolar transistors; plasma CVD; semiconductor growth; vapour phase epitaxial growth; 800 degC; DC characteristics; base; bipolar transistors; collector; collector currents; emitter layers; epitaxial film quality; high donor concentration; in situ doped low temperature epitaxial Si; maximum process temperature; plasma enhanced CVD; ultralow-pressure chemical vapor deposition; Argon; Bipolar transistors; Chemical vapor deposition; Etching; Fabrication; Plasma chemistry; Plasma devices; Plasma temperature; Silicon; Substrates;
Journal_Title :
Electron Device Letters, IEEE
