DocumentCode :
1167201
Title :
Power Semiconductor Devices for Hybrid Breakers
Author :
Holroyd, F.W. ; Temple, V.A.K.
Author_Institution :
General Electric Company Corporate Research and Development
Issue :
7
fYear :
1982
fDate :
7/1/1982 12:00:00 AM
Firstpage :
2103
Lastpage :
2108
Abstract :
In order to survive the stresses inherent in opening mechanical circuit breakers under high power fault conditions, such breakers have traditionally been extremely large, rugged, and expensive. It is the purpose of this paper to examine the possible role of semiconductor technology in reducing the requirements of such a breaker, with a view to achieving considerable savings in its construction, improvement in performance, and possibly new capabilities. In particular we will describe the development and first device results of a giant phototransistor to be used as the basic semiconductor component of a hybrid breaker.
Keywords :
Circuit breakers; Circuit faults; Electrodes; Fault currents; Fault detection; Power semiconductor devices; Semiconductor devices; Stress; Switches; Switchgear;
fLanguage :
English
Journal_Title :
Power Apparatus and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9510
Type :
jour
DOI :
10.1109/TPAS.1982.317427
Filename :
4111566
Link To Document :
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