Title :
Quarter-micrometer gate ion-implanted GaAs MESFET´s with an f/sub 1/ of 126 GHz
Author :
Wang, G.W. ; Feng, Milton
Author_Institution :
Ford Microelectron. Inc., Colorado Springs, CO, USA
Abstract :
The fabrication and characterization of a 0.25- mu m-gate, ion-implanted GaAs MESFET with a maximum current-gain cutoff frequency f/sub t/ of 126 GHz is reported. Extrapolation of current gains from bias-dependent S-parameters at 70-100% of I/sub dss/ yields f/sub 1/´s of 108-126 GHz. It is projected that an f/sub 1/ of 320 GHz is achievable with 0.1- mu m-gate GaAs MESFETs. This demonstration of f/sub 1/´s over 100 GHz with practical 0.25- mu m gate length substantially advances the high-frequency operation limits of short-gate GaAs MESFETs.<>
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; ion implantation; solid-state microwave devices; 0.25 micron; 126 GHz; S-parameters; current gains; gate length; high-frequency operation limits; ion implanted MESFET; maximum current-gain cutoff frequency; Capacitance-voltage characteristics; Current measurement; Cutoff frequency; Etching; Extrapolation; Fabrication; Gallium arsenide; HEMTs; MESFETs; Scattering parameters;
Journal_Title :
Electron Device Letters, IEEE
