DocumentCode
1167280
Title
Quarter-micrometer gate ion-implanted GaAs MESFET´s with an f/sub 1/ of 126 GHz
Author
Wang, G.W. ; Feng, Milton
Author_Institution
Ford Microelectron. Inc., Colorado Springs, CO, USA
Volume
10
Issue
8
fYear
1989
Firstpage
386
Lastpage
388
Abstract
The fabrication and characterization of a 0.25- mu m-gate, ion-implanted GaAs MESFET with a maximum current-gain cutoff frequency f/sub t/ of 126 GHz is reported. Extrapolation of current gains from bias-dependent S-parameters at 70-100% of I/sub dss/ yields f/sub 1/´s of 108-126 GHz. It is projected that an f/sub 1/ of 320 GHz is achievable with 0.1- mu m-gate GaAs MESFETs. This demonstration of f/sub 1/´s over 100 GHz with practical 0.25- mu m gate length substantially advances the high-frequency operation limits of short-gate GaAs MESFETs.<>
Keywords
III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; ion implantation; solid-state microwave devices; 0.25 micron; 126 GHz; S-parameters; current gains; gate length; high-frequency operation limits; ion implanted MESFET; maximum current-gain cutoff frequency; Capacitance-voltage characteristics; Current measurement; Cutoff frequency; Etching; Extrapolation; Fabrication; Gallium arsenide; HEMTs; MESFETs; Scattering parameters;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.31765
Filename
31765
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