DocumentCode :
1167315
Title :
High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays
Author :
Kettler, Thorsten ; Posilovic, Kristijan ; Karachinsky, Leonid Ya ; Ressel, Peter ; Ginolas, Arnim ; Fricke, Jorg ; Pohl, Udo W. ; Shchukin, Vitaly A. ; Ledentsov, Nikolai N. ; Bimberg, Dieter ; Jönsson, Jan ; Weyers, Markus ; Erbert, Gotz ; Tränkle, Günt
Author_Institution :
Inst. of Solid-State Phys., Tech. Univ. of Berlin, Berlin
Volume :
15
Issue :
3
fYear :
2009
Firstpage :
901
Lastpage :
908
Abstract :
Lasers with a waveguide based on a longitudinal photonic band crystal designed for 850 nm emission are investigated. They demonstrate ultranarrow vertical beam divergence of about 7deg full-width at half maximum without using corrective optics. A high internal efficiency of 93% is achieved. Broad-area 50-mum-wide stripe lasers with unpassivated facets show a high total output power of about 20 W in pulsed mode with far-field divergences of 9.5deg and 11.3deg of the slow and fast axis, respectively, equivalent to an ultrahigh brightness of 3×108 Wmiddotcm-2 middotsr-1 and a low aspect ratio of only 1.2. Narrow ridge lasers with 5 mum stripes demonstrate more than 1.5 W maximum output power in continuous-wave operation. Large arrays with up to 256 uncoupled single-mode laser diodes demonstrate low threshold currents of about 70 mA per laser, independent of the number of lasers in the array.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser modes; optical materials; optical waveguides; photonic crystals; semiconductor laser arrays; GaAs-AlGaAs; current 70 mA; efficiency 93 percent; low-threshold current; narrow-ridge lasers; optical waveguide; photonic band crystal lasers; pulsed laser mode; single-mode laser diode array; ultranarrow vertical beam divergence; wavelength 850 nm; High brightness; high-power lasers; photonic band crystal; semiconductor laser arrays; semiconductor lasers; single-mode semiconductor lasers;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2009.2013179
Filename :
4785509
Link To Document :
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