Title :
Numerical analysis of the frequency-dependent output conductance of GaAs MESFET´s
Author :
Lo, Shih-Hsien ; Lee, Chien-Ping
Author_Institution :
Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan
fDate :
8/1/1991 12:00:00 AM
Abstract :
The small-signal output conductance of GaAs MESFETs on semi-insulating substrate is studied using two-dimensional numerical analysis. Frequency-, temperature-, and drain-bias-dependent behaviours of the output conductance are analysed. It is confirmed that the bulk EL2 traps contribute significantly to the low-frequency-dependent behavior of the output conductance. Devices with different background trap concentrations and acceptor concentrations were analyzed and compared. For devices with higher trap concentrations, the output conductance is lower but exhibits stronger frequency dependence
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; numerical analysis; semiconductor device models; 2D model; GaAs; MESFETs; acceptor concentrations; background trap concentrations; bulk EL2 traps; drain bias dependence; frequency dependence; frequency-dependent output conductance; low-frequency-dependent behavior; semi-insulating substrate; semiconductors; small-signal output conductance; temperature dependence; two-dimensional numerical analysis; Current density; Electron emission; Electron traps; Frequency dependence; Gallium arsenide; Kelvin; MESFETs; Numerical analysis; Radioactive decay; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
