DocumentCode :
1167430
Title :
Thyristor Devices for Electric Power Systems
Author :
Temple, V.A.K.
Author_Institution :
General Electric Company Corporate Research and Development Center
Issue :
7
fYear :
1982
fDate :
7/1/1982 12:00:00 AM
Firstpage :
2286
Lastpage :
2291
Abstract :
Thyristors of higher voltage and current ratings containing new gate and self-protective features are being developed at General Electric with EPRI (Electric Power Research Institute) support. Some of the more important of these are described in this paper. Devices include light triggered thyristors (LTT\´s), now at the 5 and 6KV level, and asymr metric light triggered thyristors (ALTT\´s) with 50% higher surge capability and 50% faster turn-off times than a regular thyristor. New features include "controlled turn-on", which protects thyristors from destructive di/dt during turn-on, and " voltage breakover" (VBO) protection, which prevents destructive avalanche current turn-on.
Keywords :
Breakdown voltage; Circuit noise; HVDC transmission; Protection; Research and development; Semiconductor device noise; Surges; Thyristors; Voltage control; Working environment noise;
fLanguage :
English
Journal_Title :
Power Apparatus and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9510
Type :
jour
DOI :
10.1109/TPAS.1982.317435
Filename :
4111592
Link To Document :
بازگشت