DocumentCode
1167586
Title
A perspective on the theory of MOSFET scaling and its impact
Author
Ning, Tak H.
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA
Volume
12
Issue
1
fYear
2007
Firstpage
27
Lastpage
30
Abstract
For more than two decades following the publication of the MOSFET scaling theory, CMOS engineers focused their efforts on scaling down the physical size of CMOS transistors. The opportunity for scaled CMOS to break into high-end applications came when the industry worked together to established voltage standards below 5 volt. Two of the limits of CMOS scaling were reached in the early 2000´s: high tunneling current through the thin gate insulator and high device off current. Today, device engineers focus primarily on technology innovations for continued device performance improvement from one generation to the next.
Keywords
CMOS integrated circuits; CMOS technology; Logic gates; MOSFET circuits; Performance evaluation; Power supplies; Random access memory;
fLanguage
English
Journal_Title
Solid-State Circuits Society Newsletter, IEEE
Publisher
ieee
ISSN
1098-4232
Type
jour
DOI
10.1109/N-SSC.2007.4785538
Filename
4785538
Link To Document