DocumentCode :
1167586
Title :
A perspective on the theory of MOSFET scaling and its impact
Author :
Ning, Tak H.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA
Volume :
12
Issue :
1
fYear :
2007
Firstpage :
27
Lastpage :
30
Abstract :
For more than two decades following the publication of the MOSFET scaling theory, CMOS engineers focused their efforts on scaling down the physical size of CMOS transistors. The opportunity for scaled CMOS to break into high-end applications came when the industry worked together to established voltage standards below 5 volt. Two of the limits of CMOS scaling were reached in the early 2000´s: high tunneling current through the thin gate insulator and high device off current. Today, device engineers focus primarily on technology innovations for continued device performance improvement from one generation to the next.
Keywords :
CMOS integrated circuits; CMOS technology; Logic gates; MOSFET circuits; Performance evaluation; Power supplies; Random access memory;
fLanguage :
English
Journal_Title :
Solid-State Circuits Society Newsletter, IEEE
Publisher :
ieee
ISSN :
1098-4232
Type :
jour
DOI :
10.1109/N-SSC.2007.4785538
Filename :
4785538
Link To Document :
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