• DocumentCode
    1167586
  • Title

    A perspective on the theory of MOSFET scaling and its impact

  • Author

    Ning, Tak H.

  • Author_Institution
    IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA
  • Volume
    12
  • Issue
    1
  • fYear
    2007
  • Firstpage
    27
  • Lastpage
    30
  • Abstract
    For more than two decades following the publication of the MOSFET scaling theory, CMOS engineers focused their efforts on scaling down the physical size of CMOS transistors. The opportunity for scaled CMOS to break into high-end applications came when the industry worked together to established voltage standards below 5 volt. Two of the limits of CMOS scaling were reached in the early 2000´s: high tunneling current through the thin gate insulator and high device off current. Today, device engineers focus primarily on technology innovations for continued device performance improvement from one generation to the next.
  • Keywords
    CMOS integrated circuits; CMOS technology; Logic gates; MOSFET circuits; Performance evaluation; Power supplies; Random access memory;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits Society Newsletter, IEEE
  • Publisher
    ieee
  • ISSN
    1098-4232
  • Type

    jour

  • DOI
    10.1109/N-SSC.2007.4785538
  • Filename
    4785538