DocumentCode :
1167625
Title :
Ion implanted MOSFET´s with very short channel lengths
Author :
Dennard, R.H. ; Gaensslen, F.H. ; Yu, H.N. ; Rideout, V.L. ; Bassous, E. ; LeBlanc, A.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, N. Y.
Volume :
12
Issue :
1
fYear :
2007
Firstpage :
36
Lastpage :
37
Abstract :
Ion implantation allows the fabrication of very small MOSFET switching devices with considerably thicker gate insulators. Capacitance from the source and drain to the substrate and to the gate is reduced by more than a factor of two compared to conventional structures. Conversely, for a given thickness, smaller devices can be achieved using ion implantation.
Keywords :
Insulators; Ion implantation; Junctions; Logic gates; Substrates; Switches; Threshold voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits Society Newsletter, IEEE
Publisher :
ieee
ISSN :
1098-4232
Type :
jour
DOI :
10.1109/N-SSC.2007.4785542
Filename :
4785542
Link To Document :
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