Title :
Problems of transfer of a figure of topology when forming 3D structures (the FinFET-technology of transistors)
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
Abstract :
Experimentally it is confirmed that PHE Si process in CCl2F2/O2 plasma is well compatible to a photoresistive mask on the basis of FP-383. Dependences of rate of PHE Si on value of flows of oxygen and freon, anode current, sample layout in the reactor, physical characteristics of a silicon sample, etching time are studied. The PHE Si optimum mode suitable for practical use is found.
Keywords :
MOSFET; elemental semiconductors; silicon; sputter etching; 3D structures; CCl2F2/O2 plasma; FP-383; FinFET technology; Si; anode current; etching time; photoresistive mask; physical characteristics; sample layout; transfer problems; Anodes; Etching; Inductors; Plasmas; Resists; Silicon; Transistors; FinFET-transistor; Nanoelectronics; plasma chemical etching of silicon;
Conference_Titel :
Actual Problems of Electronics Instrument Engineering (APEIE), 2014 12th International Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-6019-4
DOI :
10.1109/APEIE.2014.7040772
