DocumentCode
1167935
Title
Patents [Three-electrode circuit element utilizing semiconductive materials - US Patent No. 2,524,035]
Volume
12
Issue
2
fYear
2007
Firstpage
32
Lastpage
33
Abstract
Reproduces two pages from John Bardeen and Walter Brattain´s US Patent No. 2,524,035 of Oct. 1950 for invention the point-contact transistor, made with germanium: the first page of diagrams and the first page of claims.
Keywords
Germaninum; History; Patents; Transistors;
fLanguage
English
Journal_Title
Solid-State Circuits Society Newsletter, IEEE
Publisher
ieee
ISSN
1098-4232
Type
jour
DOI
10.1109/N-SSC.2007.4785576
Filename
4785576
Link To Document