Title :
Patents [Three-electrode circuit element utilizing semiconductive materials - US Patent No. 2,524,035]
Abstract :
Reproduces two pages from John Bardeen and Walter Brattain´s US Patent No. 2,524,035 of Oct. 1950 for invention the point-contact transistor, made with germanium: the first page of diagrams and the first page of claims.
Keywords :
Germaninum; History; Patents; Transistors;
Journal_Title :
Solid-State Circuits Society Newsletter, IEEE
DOI :
10.1109/N-SSC.2007.4785576
