Title :
Measurement of Single-Event Effects on a Large Number of Commercial DRAMs
Author :
Sasada, T. ; Ichikawa, S. ; Kanai, T.
Author_Institution :
Japan Aerosp. Exploration Agency
Abstract :
To evaluate the characteristics of commercial memory devices for space use, the Japan Aerospace Exploration Agency (JAXA) launched a Solid State Recorder (SSR) on the Mission Demonstration test Satellite-1 (MDS-1 or ´Tsubas´) into geo-stationary transfer orbit (GTO) in February 2002. Passing through the radiation belt exposed the MDS-1 to severe radiation environment in every orbit. This flight experiment allowed the observation of Single-Event Upsets (SEU) and Total Ionizing Dose (TID) effect on a large number of stacked 64 Mbit Dynamic Random Access Memories (DRAM). As a result, the actual SEU rates could be calculated, and the capabilities of two types of on-the-fly Error Detection and Correction (EDAC) mechanisms were confirmed. This paper presents the results of the space experiment of SSR, focusing especially on SEU analysis
Keywords :
DRAM chips; error correction; error detection; space vehicles; 64 Mbits; DRAM; EDAC; SEU; SSR; TID; dynamic random access memory; error detection-correction mechanism; single-event upset; space experiment; total ionizing dose effect; Aerospace testing; Belts; DRAM chips; Error correction; Extraterrestrial measurements; Orbital calculations; Random access memory; Single event upset; Solid state circuits; Space missions; CMOS memory integrated circuits; DRAM chips; error correction; proton radiation effects; single-event effects; space vehicle electronics;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.880928
