Measurement of Single-Event Effects on a Large Number of Commercial DRAMs

Author

Sasada, T. ; Ichikawa, S. ; Kanai, T.

Author_Institution

Japan Aerosp. Exploration Agency

Volume

53

Issue

4

fYear

2006

Firstpage

1806

Lastpage

1812

Abstract

To evaluate the characteristics of commercial memory devices for space use, the Japan Aerospace Exploration Agency (JAXA) launched a Solid State Recorder (SSR) on the Mission Demonstration test Satellite-1 (MDS-1 or ´Tsubas´) into geo-stationary transfer orbit (GTO) in February 2002. Passing through the radiation belt exposed the MDS-1 to severe radiation environment in every orbit. This flight experiment allowed the observation of Single-Event Upsets (SEU) and Total Ionizing Dose (TID) effect on a large number of stacked 64 Mbit Dynamic Random Access Memories (DRAM). As a result, the actual SEU rates could be calculated, and the capabilities of two types of on-the-fly Error Detection and Correction (EDAC) mechanisms were confirmed. This paper presents the results of the space experiment of SSR, focusing especially on SEU analysis

Keywords

DRAM chips; error correction; error detection; space vehicles; 64 Mbits; DRAM; EDAC; SEU; SSR; TID; dynamic random access memory; error detection-correction mechanism; single-event upset; space experiment; total ionizing dose effect; Aerospace testing; Belts; DRAM chips; Error correction; Extraterrestrial measurements; Orbital calculations; Random access memory; Single event upset; Solid state circuits; Space missions; CMOS memory integrated circuits; DRAM chips; error correction; proton radiation effects; single-event effects; space vehicle electronics;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.880928

Filename

1684021