• DocumentCode
    1168052
  • Title

    Analytical Model of Radiation Induced or Single Event Latchup in CMOS Integrated Circuits

  • Author

    Useinov, R.G.

  • Author_Institution
    Res. Inst. of Sci. Instruments
  • Volume
    53
  • Issue
    4
  • fYear
    2006
  • Firstpage
    1834
  • Lastpage
    1838
  • Abstract
    The new model to characterize radiation induced or single event latchup is developed. Analytical expressions for radiation dose rate and LET threshold have been obtained. The model fits the experimental data reasonably well
  • Keywords
    CMOS integrated circuits; radiation effects; CMOS integrated circuits; SEL; analytical model; dynamic systems theory; radiation dose rate; radiation induced latchup; single event latchup; Analytical models; Bipolar transistors; CMOS integrated circuits; Charge carrier processes; Current density; Equations; Equivalent circuits; Integrated circuit modeling; Numerical models; Semiconductor device modeling; Dynamic systems theory; latchup; threshold LET for SEL; threshold dose rate;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2006.878820
  • Filename
    1684025
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1168052