Analysis of Quasi-Monoenergetic Neutron and Proton SEU Cross Sections for Terrestrial Applications

Author

Lambert, D. ; Baggio, J. ; Hubert, G. ; Paillet, P. ; Girard, S. ; Ferlet-Cavrois, V. ; Flament, O. ; Saigné, F. ; Boch, J. ; Sagnes, B. ; Buard, N. ; Carrière, T.

Author_Institution

CEA/DAM

Volume

53

Issue

4

fYear

2006

Firstpage

1890

Lastpage

1896

Abstract

This paper investigates the single event upset sensitivity of Bulk SRAMs for terrestrial applications. The technology sensitivity is analyzed with both quasi-monoenergetic neutron and proton experiments in an energy range from 14 to 180 MeV. Analytical and simulation based correction methods of the neutron cross section are presented and validated. Then, neutron and proton cross section are compared. Soft Error Rate (for the terrestrial neutron spectrum) calculated with either proton or quasi-monoenergetic neutron data are also presented and compared

Keywords

SRAM chips; neutron effects; proton effects; semiconductor device reliability; 14 to 180 MeV; bulk SRAMs; quasimonoenergetic neutron SEU cross sections; quasimonoenergetic proton SEU cross sections; reliability; sensitivity; single event upset; soft error rate; terrestrial applications; terrestrial neutron spectrum; Aerospace electronics; Analytical models; Circuit testing; Error analysis; Interference; Neutrons; Packaging; Particle beams; Protons; Single event upset; Bulk technologies; neutron and proton effects; single-event upset (SEU); soft error rate (SER);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.880935

Filename

1684034