Title :
Charge Sharing Study in the Case of Neutron Induced SEU on 130 nm Bulk SRAM Modeled by 3-D Device Simulation
Author :
Mérelle, T. ; Serre, S. ; Saigné, F. ; Sagnes, B. ; Gasiot, G. ; Roche, P. ; Carrière, T. ; Palau, M.-C.
Author_Institution :
Univ. Montpellier II
Abstract :
The charge sharing quantification in the case of neutron induced SEUs in a 130 nm bulk SRAM is presented. Conclusions on its contribution to the soft errors sensitivity evaluation using Monte-Carlo codes are underlined
Keywords :
CAD; Monte Carlo methods; SRAM chips; neutron effects; semiconductor device models; sensitivity; 3-D device simulation; Monte-Carlo code; TCAD simulation; bulk SRAM modeling; charge sharing; neutron induced SEU; sensitivity evaluation; soft error; Alpha particles; Atmospheric modeling; Computer aided software engineering; Consumer electronics; Electrons; Error analysis; Neutrons; Random access memory; Research and development; Semiconductor device reliability; Bulk; SEU; SRAM; TCAD simulations; charge sharing; diffusion; neutron;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.878819
