A simple diode model including conductivity modulation

A simple lumped component diode model is presented including a representation of conductivity modulation, in addition to the usual characterization by diffusion capacitance, transition capacitance, and an ideal junction. It is shown that this model employed in a switching circuit exhibits the overshoot and oscillation characteristic of diodes at high forward currents, as well as the usual charge storage effects for the reverse transient. Using small-signal analysis it is shown that in some cases the model possesses an inductive impedance which is also characteristic of diodes at high forward currents.