DocumentCode
1168267
Title
Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment
Author
Zebrev, G.I. ; Pavlov, D.Y. ; Pershenkov, V.S. ; Nikiforov, A.Y. ; Sogoyan, A.V. ; Boychenko, D.V. ; Ulimov, V.N. ; Emelyan, V.V.
Author_Institution
Dept. of Microelectron., Moscow Eng. Phys. Inst.
Volume
53
Issue
4
fYear
2006
Firstpage
1981
Lastpage
1987
Abstract
A new analytical model for enhanced yield of radiation-induced charge in low-field thick oxides due to lesser recombination under low-dose-rate and high temperature conditions has been developed. Numerical simulations are quantitatively well agreed with experimental data
Keywords
bipolar transistors; numerical analysis; radiation effects; semiconductor device models; analytical model; bipolar transistor modeling; charge recombination; electric bias; enhanced low dose rate sensitivity; high temperature condition; numerical simulation; radiation response; Bipolar transistors; Charge carrier processes; Degradation; Delay; Electron emission; Electron mobility; Electron traps; Spontaneous emission; Tail; Temperature; Bipolar transistor; enhanced low dose rate sensitivity (ELDRS); low-dose-rate irradiation; model; recombination;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2006.877851
Filename
1684047
Link To Document