A 2-million-pixel CCD image sensor overlaid with an amorphous silicon photoconversion layer

Author

Manabe, Sohei ; Mastunaga, Yosiyuki ; Furukawa, Akihiko ; Yano, Kensaku ; Endo, Yukio ; Miyagawa, Ryohei ; Iida, Yosinori ; Egawa, Yositaka ; Shibata, Hidenori ; Nozaki, Hidetosi ; Sakuma, Naoshi ; Harada, Nozomu

Author_Institution

Toshiba Corp. ULSI Res. Center, Kawasaki, Japan

Volume

38

Issue

8

fYear

1991

fDate

8/1/1991 12:00:00 AM

Firstpage

1765

Lastpage

1771

Abstract

A highly sensitive 2-million-pixel high-definition charge-coupled device (CCD) image sensor was developed that features an overlaid amorphous silicon photoconversion layer on an interline transfer-type CCD scanner. The device is adapted to the 16:9 aspect ratio. 1125 scanning lines and 2:1 interlace high-definition TV system. A dual-channel horizontal CCD register is used to reduce the operating frequency to one half of the 74.25-MHz readout frequency. A horizontal period signal storage memory (1H line memory) is provided between the vertical CCD register and the horizontal CCD register to provide the signal distribution from the vertical CCD to the horizontal CCD register during the 3.77-μs short horizontal blanking interval. This device realized a 1000 TV line horizontal limiting resolution 210 nA/1x high sensitivity. Total random noise was found to be 52 electrons RMS and a 72-dB dynamic range was achieved

Keywords

CCD image sensors; high definition television; 1000 TV line horizontal limiting resolution; 1125 scanning lines; 16:9 aspect ratio; 2 Mpixels; 2:1 interlace high-definition TV system; 74.25 MHz; CCD image sensor; HDTV; PSID; amorphous Si photoconversion layer; dual-channel horizontal CCD register; dynamic range; high sensitivity; high-definition charge-coupled device; horizontal CCD register; horizontal blanking interval; horizontal period signal storage memory; interline transfer-type CCD scanner; operating frequency; random noise; readout frequency; signal distribution; vertical CCD register; Amorphous materials; Amorphous silicon; Blanking; Charge coupled devices; Charge-coupled image sensors; Frequency; HDTV; Image sensors; Registers; TV;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.119012

Filename

119012