Guest-host active matrix liquid-crystal display using high-voltage polysilicon thin-film transistors

Author

Proano, Roberto E. ; Misage, S.R. ; Jones, Derick ; Ast, G.D.

Author_Institution

Dept. of Mater. Sci. & Eng., Cornell Univ., Ithaca, NY, USA

Volume

38

Issue

8

fYear

1991

fDate

8/1/1991 12:00:00 AM

Firstpage

1781

Lastpage

1786

Abstract

The construction and addressing of an experimental 30×30 actively addressed guest-host (G-H) liquid-crystal display (LCD) driven by polysilicon-based thin-film transistors (TFTs) is described. The design features are similar to those of high-quality, nonactive matrix addressed G-H displays used in avionics. The driving voltage is 23 V, resulting in a peak load of 46 V across the TFTs during polarity reversals. The triple-gated TFTs exhibited subnanoampere leakage currents at 40 V and mobilities, corrected for dopant diffusion under the gate, of 72 cm²/V-s for electrons and 40 cm²/V-s for holes. Because no polarizers are used, the display has a 180° viewing angle and is highly readable in reflective-, transmissive-, and mixed-mode operations

Keywords

liquid crystal displays; thin film transistors; 180° viewing angle; 23 V; 46 V; addressing; construction; design features; driving voltage; guest host active matrix LCD; high voltage polysilicon TFTs; highly readable; liquid-crystal display; mixed-mode operations; operation; peak load; polycrystalline Si transistors; reflective mode; subnanoampere leakage currents; thin-film transistors; transmissive mode; triple-gated TFTs; Active matrix addressing; Active matrix liquid crystal displays; Active matrix technology; Aerospace electronics; Liquid crystal displays; Optical polarization; Optical scattering; Silicon; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.119014

Filename

119014