DocumentCode :
1168717
Title :
Quantum efficiency and crosstalk of an improved backside-illuminated indium antimonide focal-plane array
Author :
Bloom, Ilan ; Nemirovsky, Yael
Author_Institution :
Dept. of Electr. Eng., Technion, Israel Inst. of Technol., Haifa, Israel
Volume :
38
Issue :
8
fYear :
1991
fDate :
8/1/1991 12:00:00 AM
Firstpage :
1792
Lastpage :
1796
Abstract :
The quantum efficiency and crosstalk of backside-illuminated indium antimonide photodiodes in hybrid focal plane arrays are calculated. An improved structure with crosswise ohmic contacts at the backside of the thinned InSb substrate is described. The simulations predict a significant reduction in the crosstalk while retaining high quantum efficiency
Keywords :
III-V semiconductors; image sensors; indium antimonide; infrared imaging; photodiodes; InSb substrate; backside-illuminated; crosstalk; crosswise ohmic contacts; hybrid focal plane arrays; photodiode focal-plane array; quantum efficiency; semiconductors; Crosstalk; Hybrid junctions; Indium; Metallization; Ohmic contacts; Photodiodes; Signal processing; Silicon; Spatial resolution; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.119016
Filename :
119016
Link To Document :
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