A novel structure of pressure sensors

Author

Wang, Yaoling ; Zheng, Xinyu ; Liu, Litian ; Li, Zhijian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

38

Issue

8

fYear

1991

fDate

8/1/1991 12:00:00 AM

Firstpage

1797

Lastpage

1802

Abstract

A structure for discrete and integrated pressure sensors is proposed. A piezoresistive bridge pressure sensor and a pressure-sensitive MOS oscillator on this structure were fabricated and tested. The fully MOS-compatible technology, high-grade performance, intrinsically low temperature coefficient, and feasibility of fabrication are described to show the advantages of the new structure for production of discrete and, in particular, integrated pressure sensors and large-area sensor arrays

Keywords

electric sensing devices; oscillators; piezoelectric devices; pressure transducers; semiconductor technology; silicon; tactile sensors; discrete pressure sensors; feasibility of fabrication; front side processing technology; fully MOS-compatible technology; integrated pressure sensors; large-area sensor arrays; low temperature coefficient; performance; piezoresistive bridge pressure sensor; pressure-sensitive MOS oscillator; ring oscillators; structure of pressure sensors; Bridges; Costs; Etching; Fabrication; Piezoresistance; Production; Sensor arrays; Sensor phenomena and characterization; Silicon; Wafer bonding;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.119017

Filename

119017