Title :
Mechanism of current collapse removal in field-plated nitride HFETs
Author :
Koudymov, A. ; Adivarahan, V. ; Yang, J. ; Simin, G. ; Khan, M.Asif
Author_Institution :
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
Abstract :
An experimental study of the mechanism of RF current collapse removal in high-power nitride-based HFETs is presented. The results show that the conductivity of the dielectric material under the field plate plays a crucial role in the current collapse removal. Identical geometry field plated HFETs differing only in the FP dielectric conductivity show varying degree of current collapse removal. Devices with semiconducting dielectric layers exhibit perfectly linear RF power - drain bias dependence with the output powers of 20 W/mm at 55 V drain bias with essentially no current collapse. A trapped charge discharging model is presented to explain the removal of current collapse in FPd devices.
Keywords :
MOSFET; high electron mobility transistors; microwave power transistors; 55 V; FP dielectric conductivity; FPd device; HEMT; MOSHFET; RF current collapse removal; dielectric material conductivity; drain bias; field plate; field-plated nitride HFET; geometry field plated HFET; high field-effect transistor; high-electron mobility transistors; high-power nitride-based HFET; linear RF power-drain bias; metal-oxide-semiconductor heterojunction field-effect transistor; microwave power; semiconducting dielectric layer; trapped charge discharging model; Chemical vapor deposition; Conductivity; Dielectric devices; Dielectric materials; FETs; HEMTs; MODFETs; Microwave devices; Power generation; Radio frequency; Current collapse; GaN-AlGaN; field-plate (FP); high field-effect transistors (HFET); high-electron mobility transistors (HEMT); metal–oxide–semiconductor heterojunction field-effect transistor MOSHFET; microwave power;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.855409
