• DocumentCode
    1168858
  • Title

    Technical literature [Reprint of "Field-Effect Transistor Memory" (US Patent No. 3,387,286)]

  • Author

    Dennard, Robert H.

  • Volume
    13
  • Issue
    1
  • fYear
    2008
  • Firstpage
    17
  • Lastpage
    25
  • Abstract
    Presents a reproduction of Robert H. Dennard´s ground breaking patent for one-transistor dynamic random access memory (DRAM) that led to major increases in computer memory density and decreases in cost.
  • Keywords
    FET integrated circuits; History; Patents; Random access memory;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits Society Newsletter, IEEE
  • Publisher
    ieee
  • ISSN
    1098-4232
  • Type

    jour

  • DOI
    10.1109/N-SSC.2008.4785686
  • Filename
    4785686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1168858