Title :
High mobility NMOSFET structure with high-κ dielectric
Author :
Passlack, Matthias ; Droopad, Ravi ; Rajagopalan, Karthik ; Abrokwah, Jonathan ; Gregory, Rich ; Nguyen, Danh
Author_Institution :
Freescale Semicond. Inc., Tempe, AZ, USA
Abstract :
High-κ NMOSFET structures designed for enhancement mode operation have been fabricated with mobilities exceeding 6000 cm2/Vs. The NMOSFET structures which have been grown by molecular beam epitaxy on 3-in semi-insulating GaAs substrate comprise a 10 nm strained InGaAs channel layer and a high-κ dielectric layer (κ≅20). Electron mobilities of >6000 and 3822 cm2/Vs have been measured for sheet carrier concentrations ns of 2-3×1012 and ≅5.85×1012 cm-2, respectively. Sheet resistivities as low as 280 Ω/sq. have been obtained.
Keywords :
MOSFET; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor device manufacture; 3 in; InGaAs; channel layer; charge carrier mobility; electron mobility; enhancement mode operation; high mobility NMOSFET structure; high-κ dielectric; molecular beam epitaxy; semi-insulating substrate; sheet carrier concentration; sheet resistivity; Dielectric measurements; Dielectric substrates; Electron mobility; Gallium arsenide; Hafnium oxide; III-V semiconductor materials; Indium gallium arsenide; MOSFET circuits; Molecular beam epitaxial growth; PHEMTs; Charge carrier mobility; MOSFETs; high-;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.856707
