• DocumentCode
    1168900
  • Title

    The Role of the Trench Capacitor in DRAM Innovation

  • Author

    Sunami, Hideo

  • Author_Institution
    Research Center for Nanodevices and Systems, Hiroshima University, Japan
  • Volume
    13
  • Issue
    1
  • fYear
    2008
  • Firstpage
    42
  • Lastpage
    44
  • Abstract
    Cost has been the strongest driving force for growing the DRAM market. Since die cost is closely related to the number of dies on a wafer, wafer diameter size has continually increased, and memory cell size has been reduced. To cope with the resulting dilemma of cell size vs. capacitance, the author invented the trench capacitor cell. The author documents its implementation, the "soft-error problem" that ensued, and efforts to solve it.
  • Keywords
    Capacitors; Insulators; Materials; Patents; Random access memory; Silicon; Technological innovation;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits Society Newsletter, IEEE
  • Publisher
    ieee
  • ISSN
    1098-4232
  • Type

    jour

  • DOI
    10.1109/N-SSC.2008.4785691
  • Filename
    4785691