DocumentCode
1168900
Title
The Role of the Trench Capacitor in DRAM Innovation
Author
Sunami, Hideo
Author_Institution
Research Center for Nanodevices and Systems, Hiroshima University, Japan
Volume
13
Issue
1
fYear
2008
Firstpage
42
Lastpage
44
Abstract
Cost has been the strongest driving force for growing the DRAM market. Since die cost is closely related to the number of dies on a wafer, wafer diameter size has continually increased, and memory cell size has been reduced. To cope with the resulting dilemma of cell size vs. capacitance, the author invented the trench capacitor cell. The author documents its implementation, the "soft-error problem" that ensued, and efforts to solve it.
Keywords
Capacitors; Insulators; Materials; Patents; Random access memory; Silicon; Technological innovation;
fLanguage
English
Journal_Title
Solid-State Circuits Society Newsletter, IEEE
Publisher
ieee
ISSN
1098-4232
Type
jour
DOI
10.1109/N-SSC.2008.4785691
Filename
4785691
Link To Document