A GEANT-Based Model for Single Event Upsets in SRAM FPGAs for Use in On-Detector Electronics

Author

Skutnik, Steve ; Lajoie, John

Author_Institution

Dept. of Phys. & Astron., Iowa State Univ., Ames, IA

Volume

53

Issue

4

fYear

2006

Firstpage

2353

Lastpage

2360

Abstract

A model is developed to calculate expected Single Event Upset rates in Xilinx\´s line of radiation-hardened field programmable gate array (FPGA) offerings for the radiation environment at the PHENIX experiment on the Relativistic Heavy Ion Collider at Brookhaven National Laboratory. The results of this model are compared to an experiment carried out at PHENIX, where actual upset data was obtained. Specific attention is given to unique features of the model, including major sources of "secondary" radiation flux

Keywords

SRAM chips; field programmable gate arrays; nuclear electronics; particle detectors; radiation hardening (electronics); Brookhaven National Laboratory; GEANT-based model; PHENIX experiment; Relativistic Heavy Ion Collider; SRAM FPGAs; on-detector electronics; radiation environment; radiation-hardened field programmable gate array; secondary radiation flux; single event upset modeling; Field programmable gate arrays; Gold; Logic design; Logic devices; Neutrons; Protons; Random access memory; Single event transient; Single event upset; Testing; Field programmable gate arrays (FPGA); radiation effects; single event effects; single event upset modeling;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.878282

Filename

1684111