Very high-density (23 fF/μm²) RF MIM capacitors using high-/spl kappa/ TaTiO as the dielectric

Author

Chiang, K.C. ; Lai, C.H. ; Chin, A. ; Wang, T.J. ; Chiu, H.F. ; Jiann-Ruey Chen ; McAlister, S.P. ; Chi, C.C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

26

Issue

10

fYear

2005

Firstpage

728

Lastpage

730

Abstract

A very high density of 23 fF/μm² has been measured in RF metal-insulator-metal (MIM) capacitors which use high-/spl kappa/ TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MIM capacitors should be useful for precision RF circuits.

Keywords

MIM devices; microwave devices; radiofrequency integrated circuits; tantalum compounds; thin film capacitors; titanium compounds; 100 kHz to 10 GHz; RF MIM capacitors; RF circuits; TaTiO; high-k dielectric; leakage currents; metal-insulator-metal; Capacitance; Crystallization; Dielectric losses; Dielectric measurements; Electrodes; Leakage current; MIM capacitors; Materials science and technology; Radio frequency; Voltage; Capacitor; RF metal–insulator–metal (MIM); TaTiO;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.856708

Filename

1510741

Very high-density (23 fF/μm2) RF MIM capacitors using high-/spl kappa/ TaTiO as the dielectric

Chiang, K.C. ; Lai, C.H. ; Chin, A. ; Wang, T.J. ; Chiu, H.F. ; Jiann-Ruey Chen ; McAlister, S.P. ; Chi, C.C.

jour

Very high-density (23 fF/μm²) RF MIM capacitors using high-/spl kappa/ TaTiO as the dielectric