DocumentCode :
1168956
Title :
Source-gated transistors in poly-silicon
Author :
Shannon, J.M. ; Dovinos, D. ; Balon, F. ; Glasse, C. ; Brotherton, S.D.
Author_Institution :
Sch. of Electron. & Phys. Sci., Univ. of Surrey, UK
Volume :
26
Issue :
10
fYear :
2005
Firstpage :
734
Lastpage :
736
Abstract :
Source-gated transistors (SGTs) have been made in thin layers of polysilicon formed by excimer laser crystallization of amorphous silicon. It is shown that the main features of the SGT, namely a low saturation voltage and high output impedance can be obtained in poly-silicon. Furthermore the nature of the source barrier enabled it to be pulled down by the influence of the gate to low values giving small activation energies for current transport and reduced temperature sensitivity in the on-state.
Keywords :
Schottky barriers; amorphous semiconductors; crystallisation; elemental semiconductors; laser materials processing; silicon; thin film transistors; SGT; Schottky barriers; Si; TFT; amorphous silicon; current transport; excimer laser crystallization; polysilicon thin layers; semiconductor devices; source-gated transistors; temperature sensitivity; thin film transistors; Amorphous silicon; Crystallization; Dielectrics; Electrons; FETs; Impedance; Laboratories; Low voltage; Temperature sensors; Thin film transistors; Poly-silicon (poly-Si); Schottky barriers; semiconductor devices; thin-film transistors (TFTs);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2005.855404
Filename :
1510743
Link To Document :
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