Source-gated transistors in poly-silicon

Author

Shannon, J.M. ; Dovinos, D. ; Balon, F. ; Glasse, C. ; Brotherton, S.D.

Author_Institution

Sch. of Electron. & Phys. Sci., Univ. of Surrey, UK

Volume

26

Issue

10

fYear

2005

Firstpage

734

Lastpage

736

Abstract

Source-gated transistors (SGTs) have been made in thin layers of polysilicon formed by excimer laser crystallization of amorphous silicon. It is shown that the main features of the SGT, namely a low saturation voltage and high output impedance can be obtained in poly-silicon. Furthermore the nature of the source barrier enabled it to be pulled down by the influence of the gate to low values giving small activation energies for current transport and reduced temperature sensitivity in the on-state.

Keywords

Schottky barriers; amorphous semiconductors; crystallisation; elemental semiconductors; laser materials processing; silicon; thin film transistors; SGT; Schottky barriers; Si; TFT; amorphous silicon; current transport; excimer laser crystallization; polysilicon thin layers; semiconductor devices; source-gated transistors; temperature sensitivity; thin film transistors; Amorphous silicon; Crystallization; Dielectrics; Electrons; FETs; Impedance; Laboratories; Low voltage; Temperature sensors; Thin film transistors; Poly-silicon (poly-Si); Schottky barriers; semiconductor devices; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.855404

Filename

1510743