A novel a-Si:H AMOLED pixel circuit based on short-term stress stability of a-Si:H TFTs

Author

Chaji, G.R. ; Striakhilev, D. ; Nathan, A.

Author_Institution

Electr. & Comput. Dept., Univ. of Waterloo, Ont., Canada

Volume

26

Issue

10

fYear

2005

Firstpage

737

Lastpage

739

Abstract

This letter presents a novel pixel circuit for hydrogenated amorphous silicon (a-Si:H) active matrix organic light-emitting diode displays employing the short-term stress stability characteristics of a-Si:H thin film transistors (TFTs). The pixel circuit uses a programming TFT that is under stress during the programming cycle and unstressed during the drive cycle. The threshold voltage shift (V_T-shift) of the TFT under these conditions is negligible. The programming TFT in turn regulates the current of the drive TFT, and the pixel current therefore becomes independent of the threshold voltage of the drive TFT.

Keywords

LED displays; circuit stability; thin film transistors; AMOLED pixel circuit; active matrix organic light-emitting diode displays; hydrogenated amorphous silicon; programming TFT; short-term stress stability; thin film transistors; threshold voltage shift; Active matrix organic light emitting diodes; Active matrix technology; Amorphous silicon; Backplanes; Circuit stability; Fabrication; Flat panel displays; Stress; Thin film transistors; Threshold voltage; Hydrogenated amorphous silicon (a-Si:H); active matrix organic light-emitting diode (AMOLED); thin-film transistor (TFT); threshold voltage shift (;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.855421

Filename

1510744