• DocumentCode
    1168973
  • Title

    A novel dynamic threshold Voltage MOSFET (DTMOS) using heterostructure channel of Si1-yCy interlayer

  • Author

    Shieh, Ming-Shan ; Chen, Pang-Shiu ; Tsai, M.-J. ; Lei, T.F.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • Volume
    26
  • Issue
    10
  • fYear
    2005
  • Firstpage
    740
  • Lastpage
    742
  • Abstract
    We have demonstrated the fabrication of dynamic threshold voltage MOSFET (DTMOS) using the Si1-yCy(y=0.005) incorporation interlayer channel. Compare to conventional Si-DTMOS, the introduction of the Si1-yCy interlayer for this device is realized by super-steep-retrograde (SSR) channel profiles due to the retardation of boron diffusion. A low surface channel impurity with heavily doped substrate can be achieved simultaneously. This novel Si1-yCy channel heterostructure MOSFET exhibits higher transconductance and turn on current.
  • Keywords
    MOSFET; impurities; semiconductor doping; DTMOS; boron diffusion; dynamic threshold voltage MOSFET; heavily doped substrate; heterostructure channel; low surface channel impurity; super-steep-retrograde channel; Annealing; Boron; Contacts; Doping; Impurities; MOSFET circuits; Silicon; Substrates; Threshold voltage; Transconductance; DTMOS; Si; super-steep-retrograde (SSR) channel;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2005.856011
  • Filename
    1510745
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1168973