DocumentCode
1169009
Title
State-space modeling of the PIN photodetector
Author
Zhang, J.M. ; Conn, David R.
Author_Institution
Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
Volume
10
Issue
5
fYear
1992
fDate
5/1/1992 12:00:00 AM
Firstpage
603
Lastpage
609
Abstract
A state-space modeling for metal-semiconductor-metal (MSM) or p-intrinsic-n (PIN) photodetectors is developed. This method of analysis gives the time and frequency domain response of the detector for any form of light excitation including end, uniform and exponential illumination. Both the transit time limitation and the device/circuit RC time constant are included in the model. The authors compare the calculations with previously reported analytical results, and good agreement is found
Keywords
infrared detectors; metal-semiconductor-metal structures; p-i-n diodes; photodetectors; photodiodes; semiconductor device models; PIN photodetector; device/circuit RC time constant; end illumination; exponential illumination; frequency domain response; light excitation; metal-semiconductor-metal; state-space modeling; time domain response; transit time limitation; uniform illumination; Analytical models; Charge carrier processes; Circuit testing; Electron mobility; Frequency domain analysis; Impedance; Lighting; Packaging; Photodetectors; Schottky barriers;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.136094
Filename
136094
Link To Document