Title :
Broad-band wavelength conversion based on cross-gain modulation and four-wave mixing in InAs-InP quantum-dash semiconductor optical amplifiers operating at 1550 nm
Author :
Bilenca, A. ; Alizon, R. ; Mikhelashhvili, V. ; Dahan, D. ; Eisenstein, G. ; Schwertberger, R. ; Gold, D. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fDate :
4/1/2003 12:00:00 AM
Abstract :
Wavelength conversion based on four-wave mixing (FWM) and cross-gain modulation (XGM) is experimentally demonstrated for the first time in a 1550-nm InAs-InP quantum-dash semiconductor optical amplifier. Continuous-wave FWM with a symmetric conversion efficiency dependence on detuning direction and FWM mediated short-pulse wavelength conversion are demonstrated. Using XGM, we have successfully implemented short-pulse wavelength conversion over 10 THz and error-free data conversion of a 2.5-Gb/s data sequence over 7.5 THz. The pulsed XGM experiments suggest that adjacent regions within an inhomogeneously broadened gain spectrum are partially coupled which increases the operational bandwidth, but at the expense of speed.
Keywords :
III-V semiconductors; indium compounds; multiwave mixing; optical wavelength conversion; quantum dot lasers; semiconductor optical amplifiers; spectral line broadening; wavelength division multiplexing; 1550 nm; 2.5 Gbit/s; 7.5 THz; InAs-InP; InAs-InP quantum-dash semiconductor optical amplifiers; broad-band optical wavelength conversion; cross-gain modulation; error-free data conversion; four-wave mixing; inhomogeneously broadened gain spectrum; operational bandwidth; pulsed XGM experiments; short-pulse wavelength conversion; symmetric conversion efficiency dependence; Four-wave mixing; Nonlinear optical devices; Nonlinear optics; Optical mixing; Optical modulation; Optical signal processing; Optical wavelength conversion; Pulse amplifiers; Semiconductor optical amplifiers; Wavelength conversion;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.809281