3-D stacked thin-film photodetectors for multispectral detection applications

Author

Seo, S.W. ; Geddis, D.L. ; Jokerst, N.M.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

15

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

578

Lastpage

580

Abstract

To demonstrate simultaneous multispectral detection, short and long wavelength thin-film detectors, which are grown and optimized separately, are colocated and heterogeneously integrated in a three-dimensional (3-D) stack onto pads on an Si substrate. Simultaneous two-color detection by each detector in the 3-D stack has been measured and theoretically explored. This heterogeneous integration of two different detectors in a 3-D stack is an interesting physical integration technology for multispectral imaging systems and coarse wavelength-division-multiplexing systems.

Keywords

III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared detectors; integrated optics; metal-semiconductor-metal structures; optical multilayers; photodetectors; wavelength division multiplexing; 3-D stacked thin-film photodetectors; GaAs-InGaAs; Si substrate; coarse wavelength-division-multiplexing systems; colocated heterogeneously integrated; heterogeneous integration; long wavelength thin-film detectors; multispectral detection applications; multispectral imaging; multispectral imaging systems; physical integration technology; two-color detection; Biomedical imaging; Fingers; Gallium arsenide; Infrared detectors; Multispectral imaging; Photodetectors; Photonic band gap; Substrates; Transistors; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.809273

Filename

1190209