Title : 
3-D stacked thin-film photodetectors for multispectral detection applications
         
        
            Author : 
Seo, S.W. ; Geddis, D.L. ; Jokerst, N.M.
         
        
            Author_Institution : 
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
         
        
        
        
        
            fDate : 
4/1/2003 12:00:00 AM
         
        
        
        
            Abstract : 
To demonstrate simultaneous multispectral detection, short and long wavelength thin-film detectors, which are grown and optimized separately, are colocated and heterogeneously integrated in a three-dimensional (3-D) stack onto pads on an Si substrate. Simultaneous two-color detection by each detector in the 3-D stack has been measured and theoretically explored. This heterogeneous integration of two different detectors in a 3-D stack is an interesting physical integration technology for multispectral imaging systems and coarse wavelength-division-multiplexing systems.
         
        
            Keywords : 
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared detectors; integrated optics; metal-semiconductor-metal structures; optical multilayers; photodetectors; wavelength division multiplexing; 3-D stacked thin-film photodetectors; GaAs-InGaAs; Si substrate; coarse wavelength-division-multiplexing systems; colocated heterogeneously integrated; heterogeneous integration; long wavelength thin-film detectors; multispectral detection applications; multispectral imaging; multispectral imaging systems; physical integration technology; two-color detection; Biomedical imaging; Fingers; Gallium arsenide; Infrared detectors; Multispectral imaging; Photodetectors; Photonic band gap; Substrates; Transistors; Wavelength division multiplexing;
         
        
        
            Journal_Title : 
Photonics Technology Letters, IEEE
         
        
        
        
        
            DOI : 
10.1109/LPT.2003.809273