Title :
Microscopic evaluation of spontaneous emission- and Auger-processes in semiconductor lasers
Author :
Hader, Jörg ; Moloney, Jerome V. ; Koch, Stephan W.
Author_Institution :
Opt. Sci. Center, Univ. of Arizona, Tucson, AZ, USA
Abstract :
A fully microscopic approach is used to compute the losses in semiconductor lasers due to spontaneous emission and Auger recombination. The model is based on the semiconductor-Bloch equations and generalized quantum-Boltzmann type scattering equations in the second Born-Markov approximation. As input the theory only needs the structural layout and fundamental bulk-bandstructure parameters. It is demonstrated that such a comprehensive model that calculates gain/absorption, spontaneous emission and Auger processes on the same microscopic level can reliably predict these usually dominant loss processes. Examples of the results are compared to measurements on lasers in the 1.3-1.5 μm range demonstrating very good agreement without empirical fitting.
Keywords :
Auger effect; laser theory; light scattering; optical losses; semiconductor device models; semiconductor lasers; spontaneous emission; 1.3 to 1.5 mum; Auger recombination; Auger-processes; absorption calculation; bulk-bandstructure parameters; gain calculation; generalized scattering equations; laser losses; microscopic evaluation; quantum-Boltzmann type scattering equations; second Born-Markov approximation; semiconductor lasers; semiconductor-Bloch equations; spontaneous emission; structural layout; Absorption; Equations; Laser modes; Laser theory; Microscopy; Particle scattering; Predictive models; Radiative recombination; Semiconductor lasers; Spontaneous emission; Auger recombination; GaInNAs; InGaAsP; gain; modeling; quantum-well lasers; spontaneous emission;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2005.854127
