Dynamic degradation in MOSFET´s. I. The physical effects

Deviations of dynamic MOS transistor degradation from simple static stresses are addressed from a physical viewpoint. Within this framework, properties of the Si-MOS system introduced by charge migration and trapping in the oxide are discussed along with the dynamics of the oxide/semiconductor interface. Further emphasis is placed on an enhancement of the degradation during alternating injection of electrons and holes, which is traced back to the neutralization of trapped holes by injected electrons and the related electric field modifications