Automated parameter extraction and modeling of the MOSFET below threshold

Author

Silburt, Allan L. ; Boothroyd, A.R. ; Digiovanni, Mario

Author_Institution

Mosaid Inc., Carp, Ont., Canada

Volume

7

Issue

4

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

484

Lastpage

488

Abstract

A subthreshold model for use in circuit simulation software is described. The model includes representation of nonuniform substrate impurity concentrations and short-channel and narrow-channel effects, while being simple in form. It has been developed in concert with an automated parameter-extraction methodology. The model adds only one parameter to the existing strong inversion model with which it is fully integrated. The accuracy and computational efficiency are suitable for circuit simulation. The results of an extraction carried out on nMOS transistors with channel widths from 70 to 0.9 μm and channel lengths from 35 to 1.25 μm over a wide range of bias conditions are described

Keywords

insulated gate field effect transistors; semiconductor device models; 70 to 0.9 micron; MOSFET below threshold; automated parameter-extraction methodology; channel lengths; channel widths; circuit simulation software; computational efficiency; existing strong inversion model; narrow-channel effects; nonuniform substrate impurity concentrations; range of bias conditions; results; short channel effects; subthreshold model; subthreshold region; Circuit simulation; Data mining; Impurities; Intrusion detection; MOSFET circuits; Parameter extraction; Permittivity; Semiconductor process modeling; Subthreshold current; Voltage;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.3183

Filename

3183