Title :
The impact of voltage scaling on electron heating and device performance of submicrometer MOSFETs
Author :
Venturi, Franco ; Sangiorgi, Enrico ; Ricco, Bruno
Author_Institution :
Dept. of Electron., Bologna Univ., Italy
fDate :
8/1/1991 12:00:00 AM
Abstract :
A study is presented on the effects of voltage scaling on hot-electron phenomena and intrinsic device performance in submicrometer MOSFETs. A Monte Carlo device simulator featuring a suitable band model for high-energy electrons is used. An interesting finding is that at very short channel lengths the high energy tail of the electron distribution function, the most important quantity in determining hot-carrier reliability, is controlled by the applied bias and not by local electric fields. As confirmed by recently reported experimental work, the results of this study indicate that the conventional, linear voltage scaling can be weakened using a more relaxed voltage reduction law that leads to improved performance without threatening device reliability
Keywords :
Monte Carlo methods; hot carriers; insulated gate field effect transistors; semiconductor device models; Monte Carlo device simulator; applied bias; band model; channel lengths; device performance; electron distribution function; electron heating; high energy tail; high-energy electrons; hot-electron phenomena; submicrometer MOSFETs; voltage reduction law; voltage scaling; Circuits; Electrons; Heating; Hot carriers; MOSFETs; Monte Carlo methods; Power dissipation; Signal to noise ratio; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on