Title :
The Kirk effect in the LIGBT devices
Author :
Eranen, S. ; Grönlund, Marko M. ; Blomberg, M. ; Kiihamaki, J.
Author_Institution :
Tech. Res. Centre of Finland, Espoo, Finland
fDate :
8/1/1991 12:00:00 AM
Abstract :
A study is made of the DC current-voltage characteristics of several different LIGBT (lateral insulated-gate bipolar transistor) devices both theoretically and experimentally. The theoretical part is based on the analytical expressions and includes some improvements as compared to the earlier circuit simulation models for the LIGBTs. This work extends the range of validity of these models. The fit between the theory and experiments is satisfactory also in the saturated regime of the current-voltage curves. The importance of the Kirk effect is emphasized especially for devices with short distances between the anode and cathode
Keywords :
characteristics measurement; insulated gate bipolar transistors; semiconductor device models; DC current-voltage characteristics; Kirk effect; LIGBT devices; current-voltage curves; lateral insulated-gate bipolar transistor; saturated regime; Anodes; Cathodes; Circuit simulation; Current-voltage characteristics; Driver circuits; Electrons; Helium; Insulated gate bipolar transistors; Insulation; Kirk field collapse effect;
Journal_Title :
Electron Devices, IEEE Transactions on
