• DocumentCode
    1169567
  • Title

    A self-consistent model for the SIT DC characteristics

  • Author

    Stroll, Antonio G M ; Spirito, Paolo

  • Author_Institution
    Dept. of Electron. Eng., Naples Univ., Italy
  • Volume
    38
  • Issue
    8
  • fYear
    1991
  • fDate
    8/1/1991 12:00:00 AM
  • Firstpage
    1943
  • Lastpage
    1951
  • Abstract
    An analytical model is developed for the DC characteristics of the static induction transistor (SIT). The model is based on an accurate two-dimensional solution for the potential distribution in the device and is able to explain the I-V curves of the SIT in the full range of the bias condition, with good agreement with the results of numerical simulations. The analytical model is used to study the influence of the main geometrical and physical parameters of the device on its electrical characteristics
  • Keywords
    field effect transistors; semiconductor device models; DC characteristics; I-V curves; SIT; analytical model; bias condition; electrical characteristics; physical parameters; potential distribution; self-consistent model; static induction transistor; two-dimensional solution; Analytical models; Electric breakdown; Electric variables; Geometry; Helium; Linearity; Numerical simulation; Temperature; Transistors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.119037
  • Filename
    119037
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1169567