Title :
A self-consistent model for the SIT DC characteristics
Author :
Stroll, Antonio G M ; Spirito, Paolo
Author_Institution :
Dept. of Electron. Eng., Naples Univ., Italy
fDate :
8/1/1991 12:00:00 AM
Abstract :
An analytical model is developed for the DC characteristics of the static induction transistor (SIT). The model is based on an accurate two-dimensional solution for the potential distribution in the device and is able to explain the I-V curves of the SIT in the full range of the bias condition, with good agreement with the results of numerical simulations. The analytical model is used to study the influence of the main geometrical and physical parameters of the device on its electrical characteristics
Keywords :
field effect transistors; semiconductor device models; DC characteristics; I-V curves; SIT; analytical model; bias condition; electrical characteristics; physical parameters; potential distribution; self-consistent model; static induction transistor; two-dimensional solution; Analytical models; Electric breakdown; Electric variables; Geometry; Helium; Linearity; Numerical simulation; Temperature; Transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
