Study of RHEED intensity oscillations during the heteroepitaxial growth of CaF2 on Si(111)

Author

Velichko, A.A. ; Ilyushin, V.A. ; Krupin, A.U. ; Gavrilenko, V.A. ; Filimonova, N.I. ; Kudaev, C.C.

Author_Institution

Novosibirsk State Tech. Univ., Novosibirsk, Russia

fYear

2014

fDate

2-4 Oct. 2014

Firstpage

17

Lastpage

21

Abstract

The results of investigations of the nucleation mechanisms and growth of the CaF₂/Si(111) heterostructures by reflection high-energy electron diffraction (RHEED) are presented. It is shown that preliminary growth of the 2D silicon buffer layer provides two-dimensional layer-by-layer growth of subsequent layers of CaF₂. The possible reasons of the 2D layer-by-layer growth failure at high substrate temperatures are proposed.

Keywords

buffer layers; calcium compounds; epitaxial growth; epitaxial layers; nucleation; reflection high energy electron diffraction; semiconductor-insulator boundaries; 2D layer-by-layer growth failure; 2D silicon buffer layer; CaF₂-Si; CaF₂-Si(111) heterostructure; RHEED; RHEED intensity oscillation; Si; heteroepitaxial growth; nucleation mechanism; reflection high-energy electron diffraction; substrate temperature; two-dimensional layer-by-layer growth; Diffraction; Molecular beam epitaxial growth; Oscillators; Silicon; Substrates; Surface morphology; Temperature distribution; MBE; RHEED; calcium fluoride; oscillation; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Actual Problems of Electronics Instrument Engineering (APEIE), 2014 12th International Conference on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4799-6019-4

Type

conf

DOI

10.1109/APEIE.2014.7040827

Filename

7040827