Title :
Efficient single-heterojunction Al0.27Ga0.73As/GaAs p-i-n photodiodes with 22-GHz bandwidths
Author :
Johnsen, C. ; Sloan, S. ; Braun, D. ; Russell, J.L. ; Zurakowski, M. ; Lightner, M. ; Kellert, F. ; Patterson, G. ; Koo, R. ; Derickson, D. ; Bowers, J.
Author_Institution :
Hewlett-Packard Co., Santa Rosa, CA, USA
fDate :
8/1/1991 12:00:00 AM
Abstract :
A report is presented on the design, fabrication, testing, and modeling of single-heterojunction Al0.27Ga0.73As/Ga p-i-n photodiodes for use as components in optical receivers. The photodiodes are grown by molecular beam epitaxy and fabricated as 1100-μm2 mesa structures. At 5-V reverse bias and 850 nm, 100 fF of capacitance, 90 pA of leakage current, 73% external quantum efficiency, <2% reflectivity, and 22-GHz bandwidths are typically measured
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; optical communication equipment; p-i-n diodes; photodiodes; 100 fF; 22 GHz; 5 V; 73 percent; 850 nm; 90 pA; Al0.27Ga0.73As-GaAs; III-V semiconductors; external quantum efficiency; leakage current; mesa structures; molecular beam epitaxy; optical receivers; p-i-n photodiodes; reflectivity; reverse bias; single-heterojunction diodes; Leakage current; Molecular beam epitaxial growth; Optical design; Optical device fabrication; Optical receivers; PIN photodiodes; Quantum capacitance; Reflectivity; Semiconductor process modeling; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
