Title :
Electrical characterization of the TiN/Ti/n+Si (and p +Si) interfaces by means of a circular resistor test structure
Author :
Caprile, Candida ; Scorzoni, Andrea ; Vanzi, Massimo
Author_Institution :
SGS-Thomson Microelectron., Agrate Brianza, Italy
fDate :
8/1/1991 12:00:00 AM
Abstract :
A circular geometry based test structure for contact resistance measurements is introduced, together with a compact analytical model for contact resistivity extraction. The circular resistor structure is intended to be used for VLSI contacts that tend to a rounded shape due to lithographic effects. An application to the TiN/Ti/n+Si and TiN/Ti/p+Si interfaces is presented. Good agreement is found with standard models for contact resistivity extraction that rely on cross Kelvin resistor test structures
Keywords :
VLSI; contact resistance; elemental semiconductors; metallisation; silicon; titanium; titanium compounds; TiN-Ti-Si; VLSI contacts; analytical model; circular resistor test structure; contact resistance measurements; contact resistivity extraction; cross Kelvin resistor; lithographic effects; Analytical models; Conductivity; Contact resistance; Electrical resistance measurement; Geometry; Resistors; Shape; Testing; Tin; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
