18-GHz 1/8 dynamic frequency divider using Si bipolar technologies

Author

Ichino, Haruhiko ; Ishihara, Noboru ; Suzuki, Masao ; Konaka, Shinsuke

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

24

Issue

6

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

1723

Lastpage

1728

Abstract

Circuit technology to achieve high-speed frequency dividers using Si bipolar devices is studied. A novel circuit configuration based on regenerative frequency division was proposed and analyzed. It is determined that the 3-dB-down bandwidth of the open loop of the novel circuit configuration is three times higher than that of the conventional circuit and that it operates almost up to the f _T of the transistor. A 1/8 dynamic divider using this novel circuit configuration was fabricated with advanced super self-aligned process technology (SST-1B). The divider operates between 4.6 and 18 GHz. It is noted that the circuit technology and process technology described are applicable to very-high-speed prescalers for satellite communication systems and high-speed measuring equipment

Keywords

MMIC; bipolar integrated circuits; elemental semiconductors; emitter-coupled logic; frequency dividers; silicon; 1/8 dynamic frequency divider; 4.6 to 18 GHz; ECL two-level series gating; MMIC; SHF; SST-1B; Si bipolar devices; microwave divider; regenerative frequency division; super self-aligned process; very-high-speed prescalers; Bandwidth; Circuits; Flip-flops; Frequency conversion; Local oscillators; Low pass filters; Microwave transistors; Multiplexing; Ring oscillators; Satellite communication;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.45011

Filename

45011