Title :
Analysis of the radiation heating mechanisms of heterostructures during molecular beam epitaxy
Author :
Velichko, A.A. ; Ilyushin, V.A. ; Katsyuba, A.V. ; Sivyh, G.F. ; Filimonova, N.I.
Abstract :
The paper considers the physical model of radiation heating of the heterostructures during molecular beam epitaxy. It is shown that the temperature of the heteroepitaxial semiconductor with a band gap smaller than that of the substrate increases with increasing of the film thickness. Mechanisms of the temperature change of the Ge/Si heterostructure depending on the film thickness Ge are proposed.
Keywords :
elemental semiconductors; energy gap; germanium; heat treatment; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor heterojunctions; silicon; Ge-Si; band gap; film thickness; heteroepitaxial semiconductor; heterostructures; molecular beam epitaxy; physical model; radiation heating mechanism; Abstracts; Heating; Molecular beam epitaxial growth; Photonic band gap; Semiconductor device modeling; Semiconductor process modeling;
Conference_Titel :
Actual Problems of Electronics Instrument Engineering (APEIE), 2014 12th International Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-6019-4
DOI :
10.1109/APEIE.2014.7040838
