DocumentCode
116991
Title
Analysis of the radiation heating mechanisms of heterostructures during molecular beam epitaxy
Author
Velichko, A.A. ; Ilyushin, V.A. ; Katsyuba, A.V. ; Sivyh, G.F. ; Filimonova, N.I.
fYear
2014
fDate
2-4 Oct. 2014
Firstpage
1
Lastpage
1
Abstract
The paper considers the physical model of radiation heating of the heterostructures during molecular beam epitaxy. It is shown that the temperature of the heteroepitaxial semiconductor with a band gap smaller than that of the substrate increases with increasing of the film thickness. Mechanisms of the temperature change of the Ge/Si heterostructure depending on the film thickness Ge are proposed.
Keywords
elemental semiconductors; energy gap; germanium; heat treatment; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor heterojunctions; silicon; Ge-Si; band gap; film thickness; heteroepitaxial semiconductor; heterostructures; molecular beam epitaxy; physical model; radiation heating mechanism; Abstracts; Heating; Molecular beam epitaxial growth; Photonic band gap; Semiconductor device modeling; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Actual Problems of Electronics Instrument Engineering (APEIE), 2014 12th International Conference on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4799-6019-4
Type
conf
DOI
10.1109/APEIE.2014.7040838
Filename
7040838
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