Title :
Remarkable reduction of threshold current density of 670 nm GaInAsP/AlGaAs visible lasers by increasing Al content of AlGaAs cladding layers
Author :
Chong, T.H. ; Kishino, Katsumi
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
fDate :
6/8/1989 12:00:00 AM
Abstract :
Extremely low threshold current density operation of the LPE grown 670 nm GaInAsP/AlGaAs lasers has been realised with drastic improvement of the characteristic temperature of the threshold from 45 K to 90 K by increasing the Al content of the AlGaAs cladding layers from 0.7 to 0.95. The threshold current density was 1.7 kA/cm2, about one-third of the previously reported value of 5-6 kA/cm2.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor junction lasers; 670 nm; 90 K; GaInAsP-AlGaAs; LPE grown; characteristic temperature; cladding layers; threshold current density; visible lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890514
