DocumentCode
1170122
Title
Low-threshold 1.5 mu m DFB laser grown by GSMBE
Author
Fernier, B. ; Artigue, C. ; Bonnevie, D. ; Goldstein, L. ; Perales, A. ; Benoit, J.
Author_Institution
Lab. de Marcoussis, France
Volume
25
Issue
12
fYear
1989
fDate
6/8/1989 12:00:00 AM
Firstpage
768
Lastpage
770
Abstract
GaInAsP 1.5 mu m DFB lasers with a low threshold current (17 mA) have been grown by gas source molecular beam epitaxy (GSMBE) in a two-step epitaxial process. The lasers exhibit single-mode emission for emitted power in excess of 10 mW with side mode suppression ratio of 40 dB and spectral linewidth of 15 MHz. In addition the dispersion of the lasing wavelength has been found to be as low as 1.7 nm.
Keywords
distributed feedback lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; 1.5 micron; DFB lasers; GSMBE; GaInAsP; emitted power; gas source molecular beam epitaxy; lasing wavelength; side mode suppression ratio; single-mode emission; spectral linewidth; threshold current; two-step epitaxial process;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890519
Filename
31887
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