DocumentCode
1170154
Title
AlGaAs/GaAs multiquantum-well (MQW) surface-emitting laser
Author
Uenohara, H. ; Koyama, F. ; Iga, K.
Author_Institution
Tokyo Inst. of Technol., Yokohama, Japan
Volume
25
Issue
12
fYear
1989
fDate
6/8/1989 12:00:00 AM
Firstpage
770
Lastpage
771
Abstract
In the letter the lasing characteristics of a multiquantum-well surface-emitting injection laser with 100 wells at 77 K under pulsed condition is reported. The output light of the device was linearly polarised.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; semiconductor quantum wells; 77 K; AlGaAs-GaAs; injection laser; lasing characteristics; multiquantum-well; output light; pulsed condition; surface-emitting laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890520
Filename
31888
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