Title :
Model selection for SOI MOSFET circuit simulation
Author :
Fossum, Jerry G. ; Veeraraghaven, S. ; Fitzpatrick, D.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
4/1/1988 12:00:00 AM
Abstract :
A method for experimentally selecting proper silicon-on-insulator MOSFET models for circuit simulation is described, verified, and demonstrated. The selection criteria are derived from steady-state current-voltage characteristics predicted by thin-film and (semi-)bulk models. The necessity for proper model selection is emphasized by revealing significant simulation errors that result from seemingly valid but actually empirical models
Keywords :
digital simulation; insulated gate field effect transistors; semiconductor device models; MOSFET models; SOI MOSFET circuit simulation; SiO2-Si substrate; model selection; selection criteria; simulation errors; steady-state current-voltage characteristics; Circuit simulation; FETs; MOSFET circuits; Predictive models; Semiconductor device modeling; Silicon; Thin film circuits; Thin film devices; Thin film transistors; Very large scale integration;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
