• DocumentCode
    1170253
  • Title

    Model selection for SOI MOSFET circuit simulation

  • Author

    Fossum, Jerry G. ; Veeraraghaven, S. ; Fitzpatrick, D.

  • Author_Institution
    Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
  • Volume
    7
  • Issue
    4
  • fYear
    1988
  • fDate
    4/1/1988 12:00:00 AM
  • Firstpage
    541
  • Lastpage
    544
  • Abstract
    A method for experimentally selecting proper silicon-on-insulator MOSFET models for circuit simulation is described, verified, and demonstrated. The selection criteria are derived from steady-state current-voltage characteristics predicted by thin-film and (semi-)bulk models. The necessity for proper model selection is emphasized by revealing significant simulation errors that result from seemingly valid but actually empirical models
  • Keywords
    digital simulation; insulated gate field effect transistors; semiconductor device models; MOSFET models; SOI MOSFET circuit simulation; SiO2-Si substrate; model selection; selection criteria; simulation errors; steady-state current-voltage characteristics; Circuit simulation; FETs; MOSFET circuits; Predictive models; Semiconductor device modeling; Silicon; Thin film circuits; Thin film devices; Thin film transistors; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.3189
  • Filename
    3189
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1170253