Title :
RBSOA characterization of GTO devices
Author :
Chen, Dan Y. ; Carpenter, Grant C. ; Lee, Fred C Y
Author_Institution :
Power Electron. Centre, Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fDate :
7/1/1994 12:00:00 AM
Abstract :
GTO devices are characterized using a nondestructive RBSOA (reverse bias safe operating area) tester. Breakdown phenomena observed in GTO testing are very much different from those of a BJT. Explanation of the cause of the loss of device voltage blocking capability during turn-off is given
Keywords :
losses; semiconductor device testing; thyristors; GTO devices; GTO testing; breakdown phenomena; reverse bias safe operating area tester; thyristors; turn-off; voltage blocking capability loss; Breakdown voltage; Circuit testing; Electric breakdown; Manufacturing industries; Power electronics; Protection; Shunt (electrical); Switches; Switching circuits; Traction power supplies;
Journal_Title :
Power Electronics, IEEE Transactions on
