Title :
Cryogenic temperature performance of modulation-doped field-effect transistors
Author :
Kolodzey, J. ; Laskar, J. ; Boor, S. ; Reis, Sandro ; Ketterson, Andrew ; Adesida, I.
Author_Institution :
Illinois Univ., Urbana, IL, USA
fDate :
6/8/1989 12:00:00 AM
Abstract :
Reports S-parameter measurements of AlInAs/GaInAs/InP modulation-doped field-effect transistors (MODFETs) at cryogenic temperatures. The current gain at 80 K is 3 dB higher than at 300 K, and the current gain cutoff frequency fT increases from 32 GHz at 300 K, to 42 GHz at 80 K, which is the first observation of higher fT by direct measurement.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; cryogenics; gallium arsenide; high electron mobility transistors; indium compounds; 300 K; 32 GHz; 42 GHz; 80 K; AlInAs-GaInAs-InP; S-parameter measurements; cryogenic temperatures; current gain; cutoff frequency; modulation-doped field-effect transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890525
