InGaAs–GaAs Quantum-Dot Mode-Locked Laser Diodes: Optimization of the Laser Geometry for Subpicosecond Pulse Generation

Author

Rae, A.R. ; Thompson, M.G. ; Kovsh, A.R. ; Penty, R.V. ; White, I.H.

Author_Institution

Eng. Dept., Univ. of Cambridge, Cambridge

Volume

21

Issue

5

fYear

2009

fDate

3/1/2009 12:00:00 AM

Firstpage

307

Lastpage

309

Abstract

The effect of cavity geometry on both pulsewidth and pulse output power is systematically investigated for a monolithic mode-locked quantum-dot laser diode. Subpicosecond pulse generation is demonstrated, and trends in pulsewidth and pulse output power are correlated to the ratio of the gain-to-absorber section lengths. A three-fold reduction in the pulsewidth, from 2.3 ps to 800 fs, is observed for a change in the gain-to-absorber section length ratio of 14 : 1 to 3 : 1. In addition, an associated five-fold increase in average power and 14-fold increase in peak power are also observed.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; microcavity lasers; optical pulse generation; quantum dot lasers; InGaAs-GaAs; cavity geometry; laser geometry optimization; monolithic mode locked quantum dot laser diode; quantum dot mode locked laser diodes; subpicosecond pulse generation; Diode lasers; Gallium arsenide; Geometrical optics; Laser mode locking; Optical materials; Power generation; Pulse generation; Quantum dot lasers; Quantum dots; Space vector pulse width modulation; Mode-locked lasers; quantum dots (QDs); semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.2010778

Filename

4786398